Samsung unveiled its HBM3E reminiscence referred to as Shinebolt at its Reminiscence Tech Days 2023 match. The corporate’s HBM3E reminiscence is an improve at the present HBM3 reminiscence and gives new benchmarks for reminiscence bandwidth and velocity. It’s supposed for use with high-end processors and GPUs for servers and high-end computer systems. The corporate additionally printed information about its GDDR7 VRAM growth, LPDDR5X CAMM reminiscence, and Removable AutoSSD. Samsung’s HBM3E reminiscence is claimed to be sooner than identical chips from Micron and SK Hynix The South Korean corporate’s Shinebolt HBM3E DRAM reminiscence is designed to be used in knowledge facilities for coaching AI fashions and a number of other different high-performance programs. It gives an information switch velocity of 9.8Gbps consistent with pin, which means that it could succeed in speeds of as much as 1.2TBps. Samsung has evolved its NCF (Non-Conductive Movie) generation to take away gaps between chip layers to fortify thermal functionality.
Samsung is growing its 24GBit HBM reminiscence die the usage of the fourth era EUV-based 10nm elegance (14nm) node. The usage of its 8Hi and 12Hi stacks, the corporate can produce capacities of 24GB and 36GB, providing 50% extra capability than HBM3 reminiscence. The corporate is advertising no less than 8Gbps/pin, providing a unmarried HBM3E stack with a minimal bandwidth of 1TB/sec and a most bandwidth of one.225TB/sec, upper than competition’ Micron and SK Hynix. The corporate’s HBM3E reminiscence is lately underneath the prototype level and is being despatched to its consumers for trying out, and mass manufacturing of reminiscence chips will start someday in 2024. Samsung will divulge extra details about the advance of the HBM4 reminiscence.
Samsung additionally printed that it’s going to use probably the most complicated chip design and packaging applied sciences for the HBM4 reminiscence. Despite the fact that the specification of HBM4 has now not but been licensed, it’s been printed that the corporate is taking a look to make use of the reminiscence layout (2,048-bit). The corporate desires to make use of FinFET transistors as a substitute of typical transistors to scale back energy intake. The South Korean reminiscence chip maker desires to transport from micro-bump bonding to bumpless (copper-to-copper) bonding. The generation is rather new, even for good judgment chip production, so HBM4 can also be very pricey. Samsung’s GDDR7 gives 50% decrease energy intake
A couple of months in the past, Samsung printed that it had finished the advance of GDDR7 reminiscence. GDDR7 makes use of the PMA3 sign, offering 1.5 bits to be transferred round. The corporate will start delivery 16Gbit (2GB) modules that may run as much as 32Gbps/pin, which is a 33% development over GDDR6 reminiscence. It can give speeds of 1TB/s on a 256-bit reminiscence bus. This new reminiscence permits for higher functionality in each static and standby environments, because of the additional clocks. Samsung hopes to be the primary corporate to send GDDR7 reminiscence chips someday in 2024. Alternatively, the precise time has now not but been printed. Samsung additionally printed Petabyte SSD and LPCAMM reminiscence
On the Reminiscence Tech Days 2023 match, Samsung additionally printed that it can be the primary to send a petabyte-scale SSD (PBSSD). A couple of days in the past, it introduced a brand new type of LPDDR5X DRAM for laptops and PCs: LPCAMM reminiscence chips. A brand new form of built-in however non-volatile DRAM permits the pc and PC markets to send built-in units the place DRAM isn’t offered. Due to this fact, customers can take away and improve CAMM2 DRAM modules.
For particular AI programs in units, the corporate additionally presented the LLW2 DRAM. Samsung additionally unveiled 9.6Gbps LPDDR5X DRAM chips and next-generation UFS (Common Flash Garage) chips. The corporate additionally unveiled the high-end QLC (Quad-Degree Cellular) SSD BM9C1 for PCs. Samsung unveils global’s first Removable AutoSSD for automobile use For automobile use, Samsung introduced the Removable AutoSSD, which has an information switch velocity of as much as 6,500MBps and a garage capability of as much as 4TB. Since it’s removable, automobile producers can trade the configuration in their vehicles. The South Korean corporate additionally confirmed off high-end GDDR7 VRAM and LPDDR5X DRAM reminiscence chips. Jung-Bae Lee, President and Head of Reminiscence Industry at Samsung Electronics, stated, “The brand new generation of hyperscale AI has introduced corporations to a trail the place innovation and alternative intersect, offering a chance to jump ahead, in spite of demanding situations. . Via unending creativeness and constant perseverance , we will be able to proceed our marketplace management by means of riding innovation and participating with consumers and companions to ship answers that amplify alternatives.”
